Graphene on the edge: disorder, chemistry and band engineering in vdW heterostructures

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By Prof. Peter Bøggild, Technical University of Denmark (DTU)

Hosted by: Prof. Aitor Mugarza, Atomic Manipulation and Spectroscopy Group Leader at ICN2

One of most intriguing and unique aspects of graphene is how deeply the behavior can be modified through shaping and and patterning. The high sensitivity to atomic scale structure is a doubly edged sword, however, making defect engineering very challenging, and often with results that disappoint compared to theoretical predictions. I will discuss three examples of how seemingly minor differences in edge-structure, edge-chemistry and encapsulation can have a surprising impact on the transport properties, with emphasis on our recent realisation of lithographic bandgap engineering of graphene on a 10 nm scale.


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