Defects in Compound Semiconductors and Two-Dimensional Materials

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ICN2 Seminar by Prof. Luigi Colombo

University of Texas at Dallas



The success of the semiconductor industry is in large part due to the ability to grow the highest quality materials, single crystals, and control defects such as point defects, line defects, surface defects, impurities or dopants, to control the transport properties of devices fabricated using the same. Defects are present in all materials to one extent or another and the source depends on the growth conditions and post growth processing. However, there is a big difference in the types of defects and the ability to control them found in elemental semiconductors like Si and Ge and those in compound semiconductors like III-Vs and II-VIs. The electronics industry has been very successful in identifying these defects in both elemental and compound semiconductors and thus the pervasiveness of electronics. The industry especially the Si-based industry is reaching
the physical limits of the silicon channel and they are investigating many ways of scaling transistors to meet the continuing demand for higher and higher densities. Two-dimensional materials have fundamental properties that could address some of the deficiencies of silicon because of their band structure and resulting high Ion/Ioff in monolayer form that Si channels cannot compete with. However, there are growth issues, defect control, and film integration issues that need to be resolved before these materials can be integrated in a Si-flow, i.e. replace the Si channel. In this presentation I will review defects and defect chemistry in these materials and use the knowledge of defects and defect control in 3D compound semiconductors as a guide to suggest ways of improving material quality.


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